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                RB500V-40 Diodes Rev.A 2/3 』Electrical characteristic curves (Ta=25°C) FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS REVERSE POWER DISSIPATION:P R (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0.01 0.1 1 10 100 0 100 200 300 400 500 600 700 800VF(mV) IF(mA) Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 0.001 0.01 0.1 1 10 100 0102VR(V) 030 0102030 VR(V) IR(uA) Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 1 10 100 Ct(pF) f=1MHz 350 360 370 380 390 400 Ta=25℃ IF=10mA n=30pcs AVE:370.2mV 0 100 200 300 400 500 600 700 800 900 1000 Ta=25℃ VR=10V n=30pcs AVE:88.62nA 0 2 4 6 8 10 12 14 16 18 20 AVE:5.81pF Ta=25℃ f=1MHz VR=10V n=10pcs 0 5 10 15 20 AVE:5.5A 8.3ms Ifsm 1cyc 0 5 10 15 0.1 1 10 100 cycle Ifsm(A) 8.3ms 8.3ms Ifsm 1cyc 0 5 10 15 0.1 1 10 100 t(ms) Ifsm(A) t Ifsm 1 10 100 1000 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) 1ms IM=10mA IF=100mA 300us time Mounted on epoxy board 0 0.02 0.04 0.06 0.08 0.1 00.10.20102030 Sin(θ＝180) D=1/2 DC 0 0.001 0.002 0.003 D=1/2 DC Sin(θ＝180) |